产品

4H-SiC & 6H-SiC

等级(Grade)

Grade I

Grade II

直径(Diameter)

50.8 mm±0.38 mm

厚度(Thickness)

330/430μm±25μm or CustomerSpecification

主定位边方向(Primary FlatOrientation)

Perpendicular to <11-20>±5.0°

主定位边长度(Primary FlatLength)

15.88 mm±1.65 mm

次定位边方向(SecondaryFlat Orientation)

90°CWfrom Primary flat±5.0°

次定位边长度(SecondaryFlat Length)

8.0 mm±1.65 mm

正角晶片方向(On axis WaferOrientation)

{0001}±0.25°

偏角晶片方向(Off axisWafer Orientation)

4.0°toward <11-20>±0.5°

8.0°toward <11-20>±0.5°

边缘(EdgeExclusion)

1.0 mm

总厚度变化/弯曲度/ (TTV/Bow)

< 15μm / < 15μm

微管密度(MicropipeDensity)

< 10个/cm-2

< 30个/cm-2

电阻率(Resistivity)

导电(Conductive)

0.01~0.03Ω×cm

0.01~0.1Ω×cm

半绝缘(Semi-insulating)

> 105Ω×cm

表面加工(SurfaceFinish)

Both Polished (Si face: Ra < 0.2 nm) or CustomerSpecification