GaN晶片以其卓越的光电性能，越来越广泛的应用于半导体照明，蓝绿光激光
器，高功率电子电力器件等领域，我们紧跟市场前沿成功研制了GaN衬底。
The research and applicationofGaNis nowadays a worldwide hot spot and front lineofsemiconductortechnology.
GaN Applications in LDs
In semiconductorlasers’family,mid-IR or far-IR lasers(830nm/1064nm)are bothimportantparts, butthere is another import member absent –shortwavelength(visiblelight) lasers, namely blue and green lasers.In2004, independentlydeveloped GaN-based laser diodes(blue LDs)havebeen achievedsuccessfully, now it’s on the way fromresearchtoapplication.
LDs applications:
BlueLDs(405nm <400—415nm>)can be used for high-density datastorage, laserprint, laserdisplay, laser projection camera,etc.
Future:
GaN-based MQWs LDs
Short wavelengthlaser:Green/UV/DeepUV
GaN applications inpowerelectronicdevices
MESFET,HFET,MODFET,HBT
RFPowertransistors、HightFrequencyMMICs、HightVoltageElectronics、HightTemperatureElectronics、MixedsignalGaN/SiIntegration
Future: GaN has bothhighbreakdownelectric field(like SiC) and highfrequency(likeGaAs/GeSi/InP). Ithas more potential in increasingthe workfrequency of powerelectronic devices than SiC, and theapplicationfuture is betterthan SiC.
GaN application in LED
LED(Light-Emittingdiode)hasseriesof advantages such as high illumination efficiency,fullcolor,energy conservation, long service life, quick responsespeed,smallsize, solid light source, cold lightsource(withoutheat),friendlyto environment, easily motivated, etc;which can bewidely used indisplay of various signals and graphics.Recently,quantities ofbreakthrough and progress of LED have beenachieved onGaN-basedmaterials, i.e. high efficiency blue and whiteLED hasbeen madeout not only to realize large-screen full colordisplay,but alsoto replace the incandescentlampandfluorescentlamp, thuscantotally change ourlives.
LED applications: All colorFPD:LCDbacklight, LED monitor.
氮化镓厚膜晶片
2”GaNTemplates
性能参数Specifications:
|
产品型号Item |
GaN-T-N |
GaN-T-S |
|
尺寸Dimensions |
Ф 2” |
|
|
厚度Thickness |
15 µm, 20µm,30µm, 40 µm |
30µm,90µm |
|
晶体取向Orientation |
C-axis(0001)±1° |
|
|
导电类型ConductionType |
N-type |
Semi-Insulating |
|
电阻率Resistivity(300K) |
<0.05Ω·cm |
﹥106Ω·cm |
|
位错密度DislocationDensity |
Lessthan1x108cm-2 |
|
|
衬底结构Substratestructure |
ThickGaNonSapphire(0001) |
|
|
有效面积UseableSurfaceArea |
>90% |
|
|
抛光Polishing |
Standard:SSP Option:DSP |
|
|
包装Package |
Packaged inaclass100 clean room environment, in cassettes of 25pcs orsinglewafercontainers, under a nitrogen atmosphere. |
|
2英寸氮化镓自支撑晶片
2”Free-StandingGaNSubstrates
性能参数Specifications:
|
产品型号Item |
GaN-FS-N |
GaN-FS-SI |
|
尺寸Dimensions |
Ф50.8mm±1mm |
|
|
厚度Thickness |
300±25µm |
|
|
晶体取向Orientation |
C-axis(0001)±0.5° |
|
|
主定位边OrientationFlat |
(1-100)±0.5°,16.0 ± 1.0mm |
|
|
次定位边SecondaryOrientationFlat |
(11-20) ± 3°,8.0±1.0mm |
|
|
TTV(TotalThicknessVariation) |
≤15 µm |
|
|
弯曲度BOW |
≤20 µm |
|
|
导电类型ConductionType |
N-type |
Semi-Insulating |
|
电阻率Resistivity(300K) |
<0.5Ω·cm |
>106Ω·cm |
|
位错密度DislocationDensity |
Lessthan5x106cm-2 |
|
|
有效面积UseableSurfaceArea |
>90% |
|
|
抛光Polishing |
FrontSurface:Ra< 0.2nm. Epi-ready polished BackSurface:Fineground |
|
|
包装Package |
Packaged inaclass100 clean room environment, in single wafer containers,underanitrogen atmosphere. |
|
定制尺寸氮化镓自支撑晶片
Free-standingGaNSubstrates(Customized size)
性能参数Specifications:
|
产品型号Item |
GaN-FS-10 |
GaN-FS-15 |
|
尺寸Dimensions |
10.0mm×10.5mm |
14.0mm×15.0mm |
|
厚度Thickness |
Rank300 |
300±25µm |
|
Rank350 |
350±25µm |
|
|
Rank400 |
400±25µm |
|
|
晶体取向Orientation |
C-axis(0001)±0.5° |
|
|
TTV(TotalThicknessVariation) |
≤15 µm |
|
|
弯曲度BOW |
≤20 µm |
|
|
导电类型ConductionType |
N-type |
Semi-Insulating |
|
电阻率Resistivity(300K) |
<0.5Ω·cm |
>106Ω·cm |
|
位错密度DislocationDensity |
Lessthan5x106cm-2 |
|
|
有效面积UseableSurfaceArea |
>90% |
|
|
抛光Polishing |
FrontSurface:Ra< 0.2nm. Epi-ready polished BackSurface:Fineground |
|
|
包装Package |
Packaged inaclass100 clean room environment, in single wafer containers,underanitrogen atmosphere. |
|
*5.0 mm * 5.5mmisavailable and other size can be customized.
性能参数Specifications:
|
产品型号Item |
GaN-FS-N-1.5 |
|||
|
尺寸Dimensions |
Ф25.4mm±0.5mm |
Ф38.1mm±0.5mm |
Ф40.0mm±0.5mm |
Ф45.0mm±0.5mm |
|
厚度Thickness |
300±25µm |
|||
|
晶体取向Orientation |
C-axis(0001)±0.5° |
|||
|
主定位边OrientationFlat |
(1-100)±0.5° 8 ±1mm |
(1-100)±0.5° 12±1mm |
(1-100)±0.5° 14±1mm |
(1-100)±0.5° 14±1mm |
|
次定位边SecondaryOrientationFlat |
(11-20)±3° 4 ±1mm |
(11-20)±3° 6 ±1mm |
(11-20)±3° 7 ±1mm |
(11-20)±3° 7 ±1mm |
|
TTV(TotalThicknessVariation) |
≤15 µm |
|||
|
弯曲度BOW |
≤20 µm |
|||
|
导电类型ConductionType |
N-type |
Semi-Insulating |
||
|
电阻率Resistivity(300K) |
<0.5Ω·cm |
>106Ω·cm |
||
|
位错密度DislocationDensity |
Lessthan5x106cm-2 |
|||
|
有效面积UseableSurfaceArea |
>90% |
|||
|
抛光Polishing |
FrontSurface:Ra< 0.2nm. Epi-ready polished BackSurface:Fineground |
|||
|
包装Package |
Packaged inaclass100 clean room environment, in single wafer containers,underanitrogen atmosphere. |
|||
非极性氮化镓自支撑衬底（a面和m面）
Non-PolarFreestandingGaNSubstrates（a-planeandm-plane）
性能参数Specifications:
|
产品型号Item |
GaN-FS-a |
GaN-FS-m |
|
|
尺寸Dimensions |
5.0mm×5.5mm |
||
|
5.0mm×10.0mm |
|||
|
5.0mm×20.0mm |
|||
|
CustomizedSize |
|||
|
厚度Thickness |
300±25µm |
||
|
晶体取向Orientation |
a-plane±1° |
m-plane±1° |
|
|
TTV(TotalThicknessVariation) |
≤15 µm |
||
|
弯曲度BOW |
≤20 µm |
||
|
导电类型ConductionType |
N-type |
||
|
电阻率Resistivity(300K) |
<0.5Ω·cm |
||
|
位错密度DislocationDensity |
Lessthan5x106cm-2 |
||
|
有效面积UseableSurfaceArea |
>90% |
||
|
抛光Polishing |
FrontSurface:Ra< 0.2nm. Epi-ready polished BackSurface:Fineground |
||
|
包装Package |
Packaged inaclass100 clean room environment, in singlewafercontainers,under a nitrogen atmosphere. |
||
|
|
|
|
|
*Otherthickness,sizeand offcut options available
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